6.2 Effect of Multi-Field Plates on GaN-on-Silicon HEMTs Reverse Breakdown and Leakage Characteristics

MACOM Technology Solutions has a continuing joint development efforts sponsored by the Department of Energy with MIT main campus and MIT Lincoln Laboratory to develop GaN on silicon three terminal high voltage/high current switching devices. The initial developmental goals were for a three terminal structure that has a reverse breakdown characteristic of >1200 volts and is capable of switching 10 amperes of current, with a current breakdown target of 3000 volts. This paper presents an update on the progress of this multiyear development project against these on-state current handling, reverse leakage and breakdown goals.